| Technologies |
Plasma Thermochemical Diffusion Process
Thermochemical diffusion of atomic nitrogen, carbon, boron etc. into metals at elevated temperatures to produce a hard, wear and corrosion resistant case. Plasma nitriding and nitrocarburising are popular examples, widely used to produce wear and corrosion-resistant surfaces of industrial components.
Materials modification at normal or elevated temperature by doping with atoms through pulsed ion acceleration from a conformal sheath. Dopant ions can be gaseous like nitrogen or metallic like boron or chromium. The surfaces can be metallic or dielectric.
Plasma Assisted Chemical Vapour Deposition A>
Surface modification by vapour phase synthesis and deposition of films in a reactive plasma environment to produce hard, dense and protective barrier. Silicon dioxide on brassware and aluminized automobile reflectors protects them from tarnishing. The film can also be anti-reflective as silicon oxynitride on solar cells.
Plasma surface modification of polymer materials by etching, grafting and depositing polymerised films to improve biocompatibility
In-flight material processing in high enthalpy flows for sub-micron particle synthesis, spherodisation and densification using thermal plasmas.The process can produce sub-micron aerosol particles of metals or ceramics.
Plasma gasification of organic solid materials and combustion of the product gases for complete and safe destruction of waste with high volume reduction.The heat source is the high temperature plasma torch using air or nitrogen. The exhaust gases meet environmental emission standards. The process does not require segregation of the waste.
Applications of non-equilibrium atmospheric pressure plasma for gas phase scrubbing of volatile and non-volatile contaminants and environmental remediation.
Non-equilibrium and equilibrium plasma sources and torches for basic research and industrial applications. Research reactors
can be supplied with all instrumentation and diagnostics. High power pulsed electron beam sources for research applications.Pulsed and continuous power devices (voltage = 0.1 - 30 kV and current = 1 -1000 A) for driving plasma loads using solid state, hard tube and pulse forming systems.